Honeywell DUO™ 248

DUO248 is designed for use in semiconductor manufacturing to improve and extend KrF photolithography and the plasma etch process. Containing a patented* organo-siloxane (RxCH3ySiOz) polymer (R = organic chromophore), DUO248 coatings meet the lithographic and etch requirements necessary for the patterning of thin film features within state-of-the-art IC devices. Properties include: bottom anti-reflective coating (BARC) for ArF lithography, and fill planarization of line or via topograph.

DUO248 offers excellent plasma etch characteristics. The organo-siloxane polymer comprising DUO248 provides a high degree of plasma etch selectivity to photoresist. Additionally, the organo-siloxane polymer allows for matched plasma etch selectivity to Low-k SiOCH and FSG dielectric films facilitating Dual Damascene patterning. Such plasma etch selectivity is required for exact transfer of the as patterned photoresist dimensions into the underlying thin films.

DUO248 is selectively removed using appropriate photoresist strip and wet etch chemistries.